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FQA10N80_F109 Datasheet PDF - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
FQA10N80_F109
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  2006  
PDF
FQA10N80_F109 Datasheet PDF : FQA10N80_F109 pdf     
FQA10N80_F109 image

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 9.8A, 800V, RDS(on) = 1.05Ω @VGS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

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