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FQP11N40 Datasheet PDF - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
FQP11N40
Fairchild
Fairchild Semiconductor Fairchild
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FQP11N40 Datasheet PDF : FQP11N40 pdf     
FQP11N40 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.

Features
• 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge (typical 27 nC)
• Low Crss (typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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