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FQP11N40CT Datasheet PDF - Fairchild Semiconductor

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componentes Descripción
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FQP11N40CT
Fairchild
Fairchild Semiconductor Fairchild
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FQP11N40CT Datasheet PDF : FQP11N40CT pdf     
FQPF11N40CT image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested

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