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HAT2218R Hoja de datos - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

HAT2218R image

Número de pieza
HAT2218R

componentes Descripción
Dual N-Channel MOSFET uses advanced trench technology

Other PDF
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PDF
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page
4 Pages

File Size
1.1 MB

Fabricante
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. GO URL

 

Número de pieza
componentes Descripción
PDF
Fabricante
HAT2057RA
Dual N-Channel MOSFET uses advanced trench technology
Ver
Unspecified
MTDN9926Q8
Dual N-Channel MOSFET uses advanced trench technology
Ver
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
SI4286DY
Dual N-Channel MOSFET uses advanced trench technology
Ver
Unspecified
AO4800
Dual N-Channel MOSFET uses advanced trench technology
Ver
Unspecified
MTB20A03Q8
Dual N-Channel MOSFET uses advanced trench technology
Ver
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
STM6920A
Dual N-Channel MOSFET uses advanced trench technology
Ver
Unspecified
CEM8208
Dual N-Channel MOSFET uses advanced trench technology
Ver
Unspecified
AO4840
Dual N-Channel MOSFET uses advanced trench technology
Ver
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
STM9926
Dual N-Channel MOSFET uses advanced trench technology
Ver
Unspecified
STM6914
Dual N-Channel MOSFET uses advanced trench technology
Ver
Unspecified

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