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PBSS4540Z

NPN medium power transistor

Philips Electronics 

Philips Semiconductors

NPN medium power transistor

Preliminary specification

PBSS4540Z

FEATURES

• High current (max. 10 A)

• Low voltage (max. 40 V)

• Low VCEsat.

APPLICATIONS

• Heavy duty battery powered equipment (Automotive,

Telecom and Audio/Video) such as motor and lamp

drivers

• VCEsat critical applications such as the latest low supply

voltage IC applications

• All battery driven equipment to save battery power.

DESCRIPTION

NPN low VCEsat transistor in a SOT223 plastic package.

PNP complement: PBSS5540Z.

MARKING CODE

TYPE NUMBER

PBSS4540Z

MARKING CODE

PB4540

PINNING

PIN

1

2

3

4

base

collector

emitter

collector

DESCRIPTION

handbook, halfpage

4

2, 4

1

3

1

2

3

Top view

MAM287

Fig.1 Simplified outline (SOT223) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

Tstg

Tj

Tamb

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

peak base current

total power dissipation

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C; note 1

MIN.

−

−

−

−

−

−

−

−65

−

−65

MAX.

40

40

6

5

10

2

1.35

+150

150

+150

UNIT

V

V

V

A

A

A

W

°C

°C

°C

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other

mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

1999 Aug 04

2

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