D2144S(1996) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Lista de partido
D2144S Datasheet PDF : 4 Pages
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Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO = 12V (Min.)
3) Low VCE(sat).
VCE(sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
FStructure
Epitaxial planar type
NPN silicon transistor
FExternal dimensions (Units: mm)
232
(96-232-C107)
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