ZTX601 Ver la hoja de datos (PDF) - Zetex => Diodes

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Lista de partido

ZTX601

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

Zetex => Diodes 

ZTX600

ZTX601

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX600

ZTX601

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Static Forward

hFE

Current Transfer

Ratio

Group A

Group B

1K

1K

2K

100K 2K

100K

1K

1K

1K 2K

1K 2K

2K 5K 20K 2K 5K 20K

1K 3K

1K 3K

5K 10K

5K 10K

10K 20K 100K 10K 20K 100K

5K 10K

5K 10K

IC=50mA, VCE=10V*

IC=0.5A, VCE=10V*

IC=1A, VCE=10V*

IC=50mA, VCE=10V*

IC=0.5A, VCE=10V*

IC=1A, VCE=10V*

IC=50mA, VCE=10V*

IC=0.5A, VCE=10V*

IC=1A, VCE=10V*

Transition

fT

150 250

150 250

MHz IC=100mA,

Frequency

VCE=10V f=20MHz

Input Capacitance Cibo

60 90

60 90 pF VEB=0.5V, f=1MHz

Output

Cobo

Capacitance

10 15

10 15 pF VCE=10V, f=1MHz

Switching Times ton

0.75

0.75

µs

toff

2.2

2.2

µs

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

IC=0.5A, VCE=10V

IB1=IB2=0.5mA

R5 = 50KΩ R5 = 5KΩ

1.0

0.8 R5 = 1MΩ

R5 = ∞

0.6

DC Conditions

0.4

0.2

0

1

10

100

200

VCE - Collector-Emitter Voltage (Volts)

Voltage Derating Graph

The maximum permissible operational temperature can be obtained from this graph using the

following equation

Tamb (max )

=

Power (max ) − Power (act)

0.0057

+25° C

Tamb(max)= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE

and source resistance (RS)

Power(actual)= Actual power dissipation in users circuit

3-207

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