C3793 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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C3793

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC3793

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

20

V

15

V

3

V

50

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown

voltage

V(BR)CBO

20

Collector to emitter breakdown V(BR)CEO 15

voltage

Collector cutoff current

I CBO

—

Emitter cutoff current

I EBO

—

DC current transfer ratio

hFE

30

Collector to emitter saturation VCE(sat) —

voltage

Collector output capacitance Cob

—

Gain bandwidth product

Note: Marking is “IP-”.

fT

—

Typ Max Unit Test conditions

—

—

V

IC = 10 µA, IE = 0

—

—

V

IC = 1 mA, RBE = ∞

—

1

µA

VCB = 15 V, IE = 0

—

1

µA

VEB = 3 V, IC = 0

—

200

VCE = 10 V, IC = 5 mA

—

0.5 V

IC = 20 mA, IB = 4 mA

0.7 1

2.9 —

pF

GHz

VCB = 10 V, IE = 0, f = 1MHz

VCE = 10 V, IC = 5 mA

2

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