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VNB35N07

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

STMicroelectronics 

VNP35N07FI

®

VNB35N07/VNV35N07

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET

TYPE

VNP35N07FI

VNB35N07

VNV35N07

V c la mp

70 V

70 V

70 V

RDS( o n )

0.028 Ω

0.028 Ω

0.028 Ω

Ilim

35 A

35 A

35 A

s LINEAR CURRENT LIMITATION

s THERMAL SHUT DOWN

s SHORT CIRCUIT PROTECTION

s INTEGRATED CLAMP

s LOW CURRENT DRAWN FROM INPUT PIN

s DIAGNOSTIC FEEDBACK THROUGH INPUT

PIN

s ESD PROTECTION

s DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

s COMPATIBLE WITH STANDARD POWER

MOSFET

DESCRIPTION

The VNP35N07FI, VNB35N07 and VNV35N07

are monolithic devices made using

STMicroelectronics VIPower M0 Technology,

intended for replacement of standard power

MOSFETS in DC to 50 KHz applications. Built-in

thermal shut-down, linear current limitation and

overvoltage clamp protect the chip in harsh

BLOCK DIAGRAM (∗)

ISOWATT220

3

2

1

3

1

D2PAK

TO-263

10

1

PowerSO-10

enviroments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

(∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB

June 1998

1/13

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