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2SJ132-Z

MOS FIELD EFFECT POWER TRANSISTORS

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT POWER TRANSISTORS

2SJ132, 2SJ132-Z

P-CHANNEL POWER MOS FET

FOR SWITCHING

FEATURES

• Gate drive available at logic level (VGS = −4 V)

• High current control available in small

dimension due to low RDS(on) (≅ 0.25 Ω)

• 2SJ132-Z is a lead process product and is deal

for mounting a hybrid IC.

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC

Semiconductor Devices” (Document No.

C11531E) published by NEC Corporation to

know the specification of quality grade on the

devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Symbol

Conditions

Drain to source voltage

VDSS

VGS = 0

Gate to source voltage

VGSS

VDS = 0

Drain current (DC)

ID(DC)

TC = 25°C

Drain current (pulse)

ID(pulse)

PW ≤ 300 µs

duty cycle ≤ 10 %

Total power dissipation

PT

TC = 25°C

Total power dissipation

PT

Ta = 25°C

Channel temperature

Tch

Storage temperature

Tstg

* Printing board mounted

** 7.5 cm2 × 0.7 mm ceramic board mounted

PACKAGE DRAWING (UNIT: mm)

Ratings

−30

+–20

+–2.0

+–8.0

Electrode connection

<1> Gate

<2> Drain

<3> Source

<4> Fin (drain)

Unit

INTERNAL

EQUIVALENT CIRCUIT

V

V

A

A

20

W

1.0*, 2.0**

W

150

°C

−55 to +150 °C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16192EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

©

Printed in Japan

21090928

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