STS4PF20V Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Lista de partido
STS4PF20V Datasheet PDF : 8 Pages
| |||
STS4PF20V
THERMAL DATA
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
storage temperature
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
Max
50
150
-55 to 150
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 12V
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 4.5 V
VGS = 2.7 V
ID = 2 A
ID = 2 A
Min.
0.6
Typ. Max.
0.090 0.110
0.100 0.135
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS=15V
ID=2 A
VDS = 15V, f = 1 MHz, VGS = 0
Min.
Typ.
7.5
500
140
30
Max.
Unit
S
pF
pF
pF
2/8
Share Link: 