STS4DPFS20L Ver la hoja de datos (PDF) - STMicroelectronics
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STS4DPFS20L
STMicroelectronics
STS4DPFS20L Datasheet PDF : 8 Pages
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STS4DPFS20L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY
Tstg
Storage Temperature Range
Tl
Junction Temperature
(*) Mounted on FR-4 board (Steady State)
62.5
100
-55 to 150
150
°C/W
°C/W
°C
°C
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
20
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2 A
VGS = 4.5V, ID = 2 A
Min.
1
Typ.
0.07
0.085
Max.
0.08
0.10
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS= 15V, ID = 2 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
10
1350
490
130
Max.
Unit
S
pF
pF
pF
2/8
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