STS3DPFS30 Ver la hoja de datos (PDF) - STMicroelectronics
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STS3DPFS30
STMicroelectronics
STS3DPFS30 Datasheet PDF : 5 Pages
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STS3DPFS30
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 15 V ID = 1.5 A
RG = 4.7 Ω VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 15 V ID = 3 A VGS = 10 V
Min.
Typ.
15
29
Max.
Unit
ns
ns
23
30
nC
4.2
nC
5.8
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Vclamp = 24 V ID = 3 A
RG = 4.7 Ω VGS = 10 V
(Inductive Load, see fig. 5)
Min.
Typ.
11
11
23
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 3 A VGS = 0
trr
Reverse
Time
Qrr
Reverse
Charge
Recovery ISD = 3 A di/dt = 100 A/µs
VDD = 15V Tj = 150 oC
Recovery (see test circuit, figure 5)
IRRM
Reverse
Current
Recovery
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
3
12
Unit
A
A
2
V
34
ns
45
nC
2.6
Α
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
IR(∗)
VF(∗)
Parameter
Test Conditions
Reversed
Current
Leakage TJ= 25 oC
TJ= 125 oC
VR=30V
VR=30V
Forward Voltage drop TJ= 25 oC
TJ= 125 oC
IF=3A
IF=3A
Min.
Typ.
0.03
0.46
Max.
0.2
100
0.51
0.46
Unit
mA
mA
V
V
3/5
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