August 1999
DISTRIBUTION GROUP*
IRFR9024
P-Channel Enhancement Mode Field Effect Transistor
General Description
This P-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching
PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
-8.8 A, -60 V. RDS(ON) = 0.28 Ω @ VGS = -10 V
Low gate charge.
Fast switching speed.
High performance technology for low RDS(ON).
'
*
6
72
$ EVROXWH 0D[LP XP 5DWLQJV & R ÃÃÃÃÃÃÃU 2!$ 8ÃyrÃur
vrÃrq
6\PERO
W'66
W*66
D'
Q'
U-ÃU67*
3DUDPHWHU
9
h v T
pr ÃW yh t r
B h r T
pr ÃW yh t r
H hvÃ9
hvÃ8
rÃÃÃÃ8vÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃIrÃ
& R ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU Ã2Ã 8ÃÃÃÃÃÃÃÃIrÃ
H hvÃ9
hvÃ8
rÃÃÃÃQyrq
& R H hv ÃQ r
Ã9vvhvÃ5 ÃÃU Ã2Ã!$ 8ÃÃÃÃÃÃÃÃÃIrÃ
$ R ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU Ã2 Ã! $ 8 ÃÃÃÃÃÃÃÃÃÃÃI rà h
$ R ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃU Ã2Ã!$ 8ÃÃÃÃÃÃÃÃÃÃÃIrà i
P r
h v t à h q ÃT
h t r ÃE pv ÃU r r
h
r ÃS h t r
7KHUPDO &KDUDFWHULVWLFV
Sθ-&
Sθ-$
Uur
hyÃSrvhprÃEpvÃ8hrÃÃÃÃÃÃÃÃÃÃÃÃÃÃIrÃ
Uur
hyÃSrvhprÃEpvÃ6ivrÃÃÃÃÃÃÃÃÃIrà h
3DFNDJH 0DUNLQJ DQG 2UGHULQJ ,QIRUPDWLRQ
9rvprÃHh
xvt
9rvpr
SrryÃTvr
DSAS(!#
DSAS(!#
"¶¶
9vrÃhqÃhshp
vtÃ
p rÃiwrpÃÃpuhtrà vuÃ
v
Ãvsvphv
©1999 Fairchild Semiconductor Corporation
6
*
'
5DWLQJV
%
±!
''
$%
"$
#!
"!
"
$$ÃÃ $
"
"'
U h r à vq u
%
8QLWV
W
W
6
X
°8
°8X
°8X
R h v
!$
IRFR9024 Rev. A