IRF7204 Ver la hoja de datos (PDF) - International Rectifier

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IRF7204

P-channel MOSFET for fast switching applications, 20V, 5.3A

International Rectifier 

IRF7204

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

-20 ––– –––

––– -0.022 –––

––– ––– 0.060

––– ––– 0.10

V

V/°C

Ω

VGS = 0V, ID = -250µA

Reference to 25°C, ID = -1mA

VGS = -10V, ID = -5.3A ƒ

VGS = -4.5V, ID = -2.0A ƒ

-1.0 ––– -2.5 V

––– 7.9 ––– S

––– ––– -25

µA

––– ––– -250

––– ––– -100 nA

––– ––– 100

VDS = VGS, ID = -250µA

VDS = -15V, ID = -5.3A ƒ

VDS = -16V, VGS = 0V

VDS = -16V, VGS = 0V, TJ = 125 °C

VGS = -12V

VGS = 12V

––– 25 –––

––– 5.0 –––

––– 8.0 –––

––– 14 30

ID = -5.3A

nC VDS = -10V

VGS = -10V ƒ

VDD = -10V

––– 26 60 ns ID = -1.0A

––– 100 150

RG = 6.0Ω

––– 68 100

RD = 10Ω ƒ

D

––– 2.5 –––

nH Between lead,6mm(0.25in.)

from package and center G

––– 4.0 –––

of die contact

S

––– 860 –––

––– 750 –––

––– 230 –––

VGS = 0V

pF VDS = -10V

ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

V SD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– -2.5

––– ––– -15

––– ––– -1.2

––– 85 100

––– 77 120

MOSFET symbol

D

showing the

A

integral reverse

G

p-n junction diode.

S

V TJ = 25°C, IS = -1.25A, VGS = 0V ƒ

ns TJ = 25°C, IF = -2.4A

nC di/dt = 100A/µs ƒ

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature.

ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.

‚ ISD ≤ -5.3A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Surface mounted on FR-4 board, t ≤ 10sec.

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