IRLML5203(2003) Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRLML5203 Datasheet PDF : 10 Pages
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PROVISIONAL
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3TM,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
VDSS
-30V
G1
S2
PD - 93967A
IRLML5203
HEXFET® Power MOSFET
RDS(on) max (mW)
98@VGS = -10V
165@VGS = -4.5V
ID
-3.0A
-2.6A
3D
Micro3TM
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
1
04/30/03
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