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SI4435DYTRPBF

HEXFET® Power MOSFET

International Rectifier 

October 2001

SI4435DY

30V P-Channel PowerTrench® MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –8.8 A, –30 V

RDS(ON) = 20 mΩ @ VGS = –10 V

RDS(ON) = 35 mΩ @ VGS = –4.5 V

• Low gate charge (17nC typical)

• Fast switching speed

• High performance trench technology for extremely

low RDS(ON)

• High power and current handling capability

DD

DD

DD

DD

SO-8

Pin 1SO-8 SS SS SS GG

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol

VDSS

V GSS

ID

PD

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

Power Dissipation for Single Operation

(Note 1a)

(Note 1a)

(Note 1b)

TJ, TSTG

(Note 1c)

Operating and Storage Junction Temperature Range

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

RθJA

Thermal Resistance, Junction-to-Ambient

RθJ C

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1c)

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

SI4435DY

SI4435DY

13’’

©2001 Fairchild Semiconductor Corporation

5

4

6

3

7

2

8

1

Ratings

–30

±20

–8.8

–50

2.5

1.2

1

–55 to +175

50

125

25

Tape width

12mm

Units

V

V

A

W

°C

°C/W

°C/W

°C/W

Quantity

2500 units

SI4435DY Rev D1(W)

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