1215 Ver la hoja de datos (PDF) - Dallas Semiconductor -> Maxim Integrated
Número de pieza
componentes Descripción
fabricante
1215 Datasheet PDF : 15 Pages
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AC ELECTRICAL CHARACTERISTICS ROM/RAM = VCCO
PARAMETER
SYMBOL MIN
TYP
Read Cycle Time
CEI Access Time
OE Access Time
CEI to Output in Low Z
OE to Output in Low Z
CEI to Output in High Z
OE to Output in High Z
Address Setup Time
Address Hold Time
Read Recovery
Write Cycle Time
CEI Pulse Width
OE Pulse Width
Write Recovery
Data Setup Time
Data Hold Time
RST Pulse Width
CEI Propagation Delay
CEI High to Power Fail
tRC
120
tCO
tOE
tCOE
10
tOEE
10
tOD
tODO
tAS
20
tAH
tRR
20
tWC
120
tCW
100
tOW
100
tWR
20
tDS
40
tDH
10
tRST
200
tPD
5
10
tPF
AC ELECTRICAL CHARACTERISTICS ROM/RAM = VCCO
PARAMETER
SYMBOL MIN
TYP
Recovery at Power–Up
VCC Slew Rate 4.5 – 3.0V
tREC
tF
0
DS1215
(0°C to 70°C; VCC = 5V ± 10%)
MAX
UNITS NOTES
ns
100
ns
100
ns
ns
ns
40
ns
40
ns
ns
10
ns
ns
ns
ns
ns
ns
4
ns
5
ns
5
ns
20
ns
2, 3
0
ns
(0°C to 70°C; VCC < 4.5V)
MAX
UNITS NOTES
2
ms
ms
032697 9/15
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