80RIA40M Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
80RIA40M Datasheet PDF : 8 Pages
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Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
Blocking
Parameter
dv/dt
IRRM
IDRM
Maximum critical rate of rise of
off-state voltage
Max. peak reverse and off-state
leakage current
Triggering
Parameter
PGM Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD DC gate current not to trigger
VGD DC gate voltage not to trigger
Index
Next Da8ta0RShIAeeSteries
80RIA
300
1
110
Units Conditions
A/µs
TJ = 125°C, Vd = rated VDRM, ITM = 2xdi/dt snubber
0.2µF, 15Ω, Gate pulse: 20V, 65Ω, tp = 6µs, tr= 0.5µs
Per JEDEC Standard RS-397, 5.2.2.6.
Gate pulse: 10V, 15Ω source, tp = 6µs, tr = 0.1µs,
µs Vd = rated VDRM, ITM = 50Adc, TJ = 25°C.
ITM = 50A, TJ = TJ max, di/dt = -5A/µs min., VR = 50V,
dv/dt = 20V/µs, Gate bias: 0V 25Ω, tp = 500µs
80RIA
Units Conditions
500
V/µs TJ = 125°C exponential to 67% rated VDRM
15
mA TJ = 125°C rated VDRM/VRRM applied
23
80RIA
12
3
3
20
10
270
120
60
3.5
2.5
1.5
6
0.25
Units Conditions
W
TJ = TJ max, tp ≤ 5ms
TJ = TJ max, f = 50Hz, d% = 50
A TJ = TJ max, tp ≤ 5ms
V
TJ = TJ max, tp ≤ 5ms
TJ = - 40°C
mA TJ = 25°C
TJ = 125°C
TJ = - 40°C
V TJ = 25°C
TJ = 125°C
mA
TJ = TJ max
V
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 6V an-
ode-to-cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
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