ST3230C16R3L Ver la hoja de datos (PDF) - International Rectifier
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ST3230C16R3L Datasheet PDF : 6 Pages
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ST3230C..R Series
Bulletin I25200 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
10
12
ST3230C..R
14
16
18
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
1000
1200
1400
1600
1800
VRSM , maximum non-
repetitive peak voltage
V
1100
1300
1500
1700
1900
IDRM/IRRM max.
@ TC = 125°C
mA
250
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Case temperature
IT(AV) Max. average on-state current
@ Heatsink temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t Maximum I2t for fusing
VT(TO) Max. value of threshold voltage
rt
Max. value of on-state slope
resistance
VTM Max. on-state voltage
IL
Typical latching current
ST3230C..R Units Conditions
2785 (1720)
80
3360 (1360)
55 (85)
5970
61200
64000
49000
51300
18730
17000
12000
10920
0.92
A
°C 180° conduction, half sine wave
A double side (single side [anode side]) cooled
°C
A DC @ 25°C heatsink temperature double side cooled
A
KA2s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
50% VRRM
reapplied
No voltage
reapplied
50% VRRM
reapplied
Sinusoidal half wave,
Initial T = 125°C
C
V TJ = TJ max.
0.09
1.3
300
mΩ TJ = TJ max.
V Ipk= 2900A, TC = 25°C
mA TJ = 25°C, VD = 5V
Switching
Parameter
ST3230C..R
di/dt Max. repetitive 50Hz (no repetitive)
rate of rise of turned-on current
150 (300)
td
Maximum delay time
4.5
tq
Typical turn-off time
500
Units Conditions
A/µs
µs
From
67%
V
DRM
to
1000A
gate
drive
10V,
5Ω,
tr
=
0.5µs
to 1A, TJ = TJ max.
Gate
drive
30V,
15Ω,
Vd
=
67%
V,
DRM
T
J
=
25°C
Rise time 0.5µs
IT = 1000A, tp = 1ms, TJ = TJ max, VRM = 50V,
dIRR/dt = 2A/µs, VDR = 67% VDRM, dvDR/dt = 8V/µs linear
2
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