TEMD5000(2000) Ver la hoja de datos (PDF) - Vishay Semiconductors
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TEMD5000 Datasheet PDF : 5 Pages
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TEMD5000
Vishay Semiconductors
Basic Characteristics
Tamb = 25_C
Parameter
Breakdown Voltage
Test Conditions
m IR = 100 A, E = 0
Symbol Min
V(BR) 60
Typ
Max Unit
V
Reverse Dark Current
VR = 10 V, E = 0
Iro
2
30 nA
Diode Capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
70
pF
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Temp. Coefficient of Ik
Reverse Light Current
VR = 3 V, f = 1 MHz, E = 0
l Ee = 1 mW/cm2, = 950 nm
l Ee = 1 mW/cm2, = 950 nm
CD
Vo
TKVo
EA = 1 klx
l Ee = 1 mW/cm2, = 950 nm
l Ee = 1 mW/cm2, = 950 nm
Ik
Ik
TKIk
EA = 1 klx, VR = 5 V
lEe = 1 mW/cm2,
= 950 nm, VR = 5 V
Ira
Ira
40
25
350
–2.6
70
50
0.1
75
55
40 pF
mV
mV/K
mA
mA
%/K
mA
mA
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
l VR = 10 V, = 950 nm
W VR = 10 V, RL = 1 k ,
l = 820 nm
W VR = 10 V, RL = 1 k ,
l = 820 nm
ϕ
lp
l0.5
NEP
tr
tf
±65
900
600...1050
4x10–14
100
100
deg
nm
nm
W/√ Hz
ns
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20
40
VR=10V
60
80
100
94 8403
Tamb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2
lVR=5V
=950nm
1.0
0.8
0.6
0
20
40
60
80 100
94 8416
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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2 (5)
Document Number 81552
Rev. 3, 25-May-00
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