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KGF1312

Power FET (Plastic Package Type)

Oki Electric Industry 

¡ electronic components

KGF1313

ABSOLUTE MAXIMUM RATINGS

Item

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Storage temperature

Symbol

VDS

VGS

IDS

Ptot

Tch

Tstg

Condition

Ta = 25°C

Ta = 25°C

Ta = 25°C

Ta = Tc = 25°C

—

—

Unit

Min.

V

—

V

–5.0

A

—

W

—

°C

—

°C

–45

Max.

7.0

0.4

2.0

4.5

150

125

ELECTRICAL CHARACTERISTICS

Item

Gate-source leakage current

Gate-drain leakage current

Drain-source leakage current

Drain current

Gate-source cut-off voltage

Output power

Drain efficiency

Linear gain

Thermal resistance

Symbol

IGSS

IGDO

IDS(off)

IDSS

VGS(off)

PO

hD

GLIN

Rth

Condition

VGS = –5 V

VGD = –12 V

VDS = 7 V, VGS = –5 V

VDS = 1.5 V, VGS = 0 V

VDS = 3 V, IDS = 4.0 mA

(*1), PIN = 20 dBm

(*1), PIN = 20 dBm

(*1), PIN = 0 dBm

Channel to case

*1 Condition: f = 1.9 GHz, VDS = 3.4 V, IDSQ = 200 mA

Unit

mA

mA

mA

A

V

dBm

%

dB

°C/W

Min.

—

—

—

1.3

–3.0

27.0

45

—

—

(Ta = 25°C)

Typ. Max.

—

100

—

500

— 1500

—

—

—

–2.0

27.5

—

50

—

9.5

—

15

—

3/7

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