IRL3103D1 Ver la hoja de datos (PDF) - International Rectifier
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IRL3103D1 Datasheet PDF : 6 Pages
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IRL3103D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Ciss
Input Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.014
VGS = 10V, ID = 34A
––– ––– 0.019 Ω VGS = 4.5V, ID = 28A
1.0 ––– –––
23 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 32A
––– ––– 0.10 mA VDS = 30V, VGS = 0V
––– ––– 22
VDS = 24V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 43
ID = 32A
––– ––– 14 nC VDS = 24V
––– ––– 23
VGS = 4.5V, See Fig. 6
––– 9.0 –––
VDD = 15V
––– 210 ––– ns ID = 32A
––– 20 –––
RG = 3.4Ω, VGS =4.5V
––– 54 –––
RD = 0.43 Ω,
Between lead,
D
––– 4.5 ––– nH 6mm (0.25in.)
––– 7.5 –––
––– 1900 –––
from package
G
and center of die contact
S
VGS = 0V
––– 810 –––
––– 240 –––
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
––– 3500 –––
VGS = 0V, VDS = 0V
Body Diode & Schottky Diode Ratings and Characteristics
IF (AV)
ISM
VSD1
VSD2
trr
Qrr
ton
Parameter
( Schottky)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.0
A showing the
integral reverse
G
––– ––– 220
S
p-n junction and Schottky diode.
––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V
––– ––– 0.50 V TJ = 25°C, IS = 1.0A, VGS = 0V
––– 51 77 ns TJ = 25°C, IF = 32A
––– 49 73 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3103 data and test conditions
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