IRF7303TR Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRF7303TR

HEXFET® Power MOSFET

International Rectifier 

IRF7303

5.0

4.0

3.0

2.0

1.0

0.0

25

50

75

100

125

150

TC, Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

VDS

VGS

RG

RD

D.U.T.

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+

-

VDD

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

100

D = 0.50

0.20

10

0.10

0.05

0.02

1

0.01

SINGLE PULSE

(THERMAL RESPONSE)

PDM

t1

t2

0.1

0.0001

0.001

Notes:

1. Duty factor D = t1 / t 2

2. Peak T J = P DM x Z thJA + TA

0.01

0.1

1

t1, Rectangular Pulse Duration (sec)

10

100

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Share Link: