IRLZ14S Ver la hoja de datos (PDF) - International Rectifier
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IRLZ14S Datasheet PDF : 10 Pages
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IRLZ14S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
60 ––– ––– V VGS = 0V, ID = 250µA
––– 0.07 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.2
––– ––– 0.28
Ω
VGS = 5.0V, ID = 6.0A
VGS = 4.0V, ID = 5.0A
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
3.5 ––– ––– S VDS = 25V, ID = 6.0A
––– ––– 25
––– ––– 250
µA VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 10V
––– ––– -100
VGS = -10V
––– ––– 8.4
––– ––– 3.5
––– ––– 6.0
––– 9.3 –––
ID = 10A
nC VDS = 48V
VGS = 5.0V, See Fig. 6 and 13
VDD = 30V
––– 110 –––
––– 17 –––
––– 26 –––
––– 7.5 –––
ID = 10A
RG = 12Ω
RD = 2.8Ω, See Fig. 10
Between lead,
nH
and center of die contact
––– 400 –––
VGS = 0V
––– 170 ––– pF VDS = 25V
––– 42 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 10
––– ––– 40
––– ––– 1.6
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 10A, VGS = 0V
––– 93 130 ns TJ = 25°C, IF = 10A
––– 340 650 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25Ω, IAS = 10A. (See Figure 12)
ISD ≤ 10A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ14 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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