IRF630N(2000) Ver la hoja de datos (PDF) - International Rectifier

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IRF630N
(Rev.:2000)

HEXFET® Power MOSFET

International Rectifier 

IRF630N/S/L

15V

VDS

L

D RIVER

RG

20V

tp

D .U .T

IA S

0.01Ω

+

- VDD

A

Fig 12a. Unclamped Inductive Test Circuit

V (B R )D S S

tp

IAS

Fig 12b. Unclamped Inductive Waveforms

QG

10 V

QGS

QGD

VG

Charge

Fig 13a. Basic Gate Charge Waveform

200

ID

TOP

2.2A

3.8A

BOTTOM 5.4A

150

100

50

0

25

50

75 100 125 150 175

Starting TJ , Junction Temperature (° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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