IRF630N Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRF630N Datasheet PDF : 11 Pages
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IRF630N/S/L
1200
1000
800
600
400
200
VGS = 0V, f = 1 MHZ
Ciss = Cgs+ Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
Ciss
Coss
Crss
16 ID = 5.4A
12
8
4
VDS= 160V
VDS= 100V
VDS= 40V
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
0
5
10
15
20
25
30
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
TJ = 175°C
1
TJ = 25°C
0.1
0.2
V GS= 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
10
100us
1
1ms
TC= 25 °C
TJ = 175 °C
Single Pulse
0.1
1
10
10ms
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
4
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