IRL2203N Ver la hoja de datos (PDF) - International Rectifier
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IRL2203N Datasheet PDF : 8 Pages
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IRL2203N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy
Min. Typ. Max. Units
Conditions
30 ––– –––
––– 0.029 –––
––– ––– 7.0
––– ––– 10
V
V/°C
mΩ
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 60A
VGS = 4.5V, ID = 48A
1.0 ––– –––
73 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 60A
––– ––– 25 µA VDS = 30V, VGS = 0V
––– ––– 250
VDS = 24V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 60
––– ––– 14
ID = 60A
nC VDS = 24V
––– ––– 33
––– 11 –––
VGS = 4.5V, See Fig. 6 and 13
VDD = 15V
––– 160 –––
ID = 60A
––– 23 –––
RG = 1.8Ω
––– 66 –––
VGS = 4.5V, See Fig. 10
––– 4.5 –––
Between lead,
D
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
S
––– 3290 –––
VGS = 0V
––– 1270 –––
VDS = 25V
––– 170 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 1320
290 mJ IAS = 60A, L = 0.16mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 116
A
showing the
integral reverse
G
––– ––– 400
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 60A, VGS = 0V
––– 56 84 ns TJ = 25°C, IF = 60A
––– 110 170 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 60A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Starting TJ = 25°C, L = 0.16mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 60A, VGS=10V (See Figure 12)
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
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