IRFZ44ESL Ver la hoja de datos (PDF) - International Rectifier
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IRFZ44ESL Datasheet PDF : 10 Pages
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IRFZ44ES/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
60 ––– ––– V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient ––– 0.063 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.023 Ω VGS = 10V, ID = 29A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
15 ––– ––– S VDS = 30V, ID = 29A
IDSS
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg
Total Gate Charge
––– ––– 60
ID = 29A
Qgs
Gate-to-Source Charge
––– ––– 13 nC VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 23
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 30V
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
60 –––
70 ––– ns
ID = 29A
RG = 15Ω
tf
Fall Time
––– 70 –––
RD = 1.1Ω, See Fig. 10
LS
Internal Source Inductance
Between lead,
––– 7.5 ––– nH and center of die contact
Ciss
Input Capacitance
––– 1360 –––
VGS = 0V
Coss
Output Capacitance
––– 420 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 160 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 48
A showing the
integral reverse
G
––– ––– 192
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
––– 69 104 ns TJ = 25°C, IF = 29A
––– 177 266 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 520µH
RG = 25Ω, IAS = 29A. (See Figure 12)
ISD ≤ 29A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ44E data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
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