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IRFZ44VL

HEXFET® Power MOSFET

International Rectifier 

IRFZ44VS/IRFZ44VL

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max.

60 ––– –––

––– 0.062 –––

––– ––– 16.5

2.0 ––– 4.0

24 ––– –––

––– ––– 25

––– ––– 250

––– ––– 100

––– ––– -100

––– ––– 67

––– ––– 18

––– ––– 25

––– 13 –––

––– 97 –––

––– 40 –––

––– 57 –––

––– 4.5 –––

––– 7.5 –––

––– 1812 –––

––– 393 –––

––– 103 –––

Units

V

V/°C

mΩ

V

S

µA

nA

nC

ns

nH

pF

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 31A „

VDS = VGS, ID = 250µA

VDS = 25V, ID = 31A„

VDS = 60V, VGS = 0V

VDS = 48V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 51A

VDS = 48V

VGS = 10V, See Fig. 6 and 13 „

VDD = 30V

ID = 51A

RG = 9.1Ω

RD = 0.6Ω, See Fig. 10 „

Between lead,

D

6mm (0.25in.)

from package

G

and center of die contact

S

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 55

A showing the

integral reverse

G

––– ––– 220

p-n junction diode.

S

––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V „

––– 70 105 ns TJ = 25°C, IF = 51A

––– 146 219 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ Starting TJ = 25°C, L = 89µH

RG = 25Ω, IAS = 51A. (See Figure 12)

ƒ ISD ≤ 51A, di/dt ≤ 227A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

2

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