LND822 Ver la hoja de datos (PDF) - Linear Dimensions Semiconductor
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LND822 Datasheet PDF : 4 Pages
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LND820/821/822/823
ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise specified)
Symbol Parameter
Conditions
Min Typ Max Units
V(BR)DSS
Drain-to-source
Breakdown Voltage
LND-820/822 VGS=0V,
LND821/823 ID = 250µA
500
450
-
-
∆V(BR)DSS Breakdown Voltage Temp.
/ ∆TJ
Coefficient
Reference to 25ºC
ID=1mA
- 0.59 -
ID(on)
On-State Drain
Current(Note 2)
LND820/821 VGS > ID(on) x
2.5
LND821/823 RDS(on)Max, VGS=10V 2.2
-
-
RDS(ON)
Static Drain-to-Source On- LND820/821
Resistace
LND822/823
VGS =0V,ID =1.5A(4)
3.0
4.0
V
V/ºC
A
Ω
VGS(th)
gfs
IDSS
IGSS
Qg
Qqs
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
Gate Threshold Voltage
Forward
Transconductance
Drain-to-source Leakage
Current (TC=125ºC)
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-drain(“Miller”)
Charge
Turn-on Delay Time
Rise time
Turn-off Delay time
Fall time
Internal Drain Inductance
Input Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS=VGS, ID=250µA
2.0
-
4.0
V
VDS=50V,ID =1.5A(4) 1.5
VDS=500V,VGS =0V
-
VDS= 400V,VGS = 0V
-
VGS=-20V
-
VGS=-20V
-
-
-
S
25
µA
250 µA
- 100
nA
- -100
ID=2.1A
VDS=400V
VGS =10V (4)
-
-
24
-
-
3.3 nC
-
-
13
VDD =250V
8.0
ID=2.1A
RG=18Ω
-
8.6
-
33
ns
RD=100Ω (4)
-
16
Between lead 6mm
(0.25 in.)
-
4.5
From package and
center of die contact
-
7.5
nH
VGS=0V
VDS=25V
F=1.0 MHz
- 360
-
92
pF
-
37
• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com •
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