RFM12N35 Ver la hoja de datos (PDF) - Intersil
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Lista de partido
RFM12N35 Datasheet PDF : 4 Pages
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Semiconductor
September 1998
RFM12N35,
RFM12N40
12A, 350V and 400V, 0.500 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFM12
N35,
RFM12
N40)
/Sub-
ject
(12A,
350V
and
400V,
0.500
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Author
()
/Key-
words
(12A,
350V
and
400V,
0.500
Ohm,
N-Chan-
nel
Power
MOS-
FETs)
/Cre-
ator ()
/DOCIN
Features
• 12A, 350V and 400V
• rDS(ON) = 0.500Ω
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFM12N35
TO-204AA
RFM12N35
RFM12N40
TO-204AA
RFM12N40
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17434.
Symbol
D
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
G
S
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 1787.1
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