GMS30120 Ver la hoja de datos (PDF) - Hynix Semiconductor
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GMS30120 Datasheet PDF : 158 Pages
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CHAPTER 2. Architecture
Chapter 2. Architecture
BLOCK DESCRIPTION
Characteristics
Ø The GMS300 series can incorporate maximum 1024 words (64 words 16
Ø pages 8bits) for program memory. Program counter PC (A0~A5) and page
address register (A6~A9) are used to address the whole area of program memory
having an instruction (8bits) to be next executed.
The program memory consists of 64 words on each page, and thus each page
can hold up to 64 steps of instructions.
The program memory is composed as shown below.
Program capacity (pages)
0
8
1
2
3
4
5
6
7
Page 0
Page 1 Page 2
Page 15
63
0
A0~A5
Program counter (PC)
1
2
15
A6~A9
Page address register (PA)
6
4
(SR)
Stack register
(PRS)
(Level Ì1Ì)
(Level Ì2Ì)
(Level Ì3Ì)
Page buffer (PB)
Fig 2-1 Configuration of Program Memory
2- 1
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