MC100E101FNR2(2003) Ver la hoja de datos (PDF) - ON Semiconductor

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MC100E101FNR2
(Rev.:2003)

5V ECL Quad 4-Input OR/NOR Gate

ON Semiconductor 

MC10E101, MC100E101

AC CHARACTERISTICS VCCx= 5.0 V; VEE= 0.0 V or VCCx= 0.0 V; VEE= −5.0 V (Note 8)

0°C

25°C

85°C

Symbol

Characteristic

Min Typ Max Min Typ Max Min Typ Max Unit

fMAX

Maximum Toggle Frequency

700

700

700

MHz

tPLH

Propagation Delay to Output

ps

tPHL

D to Q 200 350 500 200 350 500 200 350 500

tSKEW

Within-Device Skew (Note 11)

50

50

50

ps

tSKEW

Within-Gate Skew (Note 12)

25

25

25

tJITTER

Random Clock Jitter (RMS)

<1

<1

<1

ps

tr

Rise/Fall Time

ps

tf

(20 - 80%)

300 380 575 300 380 575 300 380 575

NOTE: Devices are designed to meet the AC specifications shown in the above table, after thermal equilibrium has been established. The

circuit is in a test socket or mounted on a printed circuit board and transverse air flow greater than 500 lfpm is maintained.

10. 10 Series: VEE can vary −0.46 V / +0.06 V.

100 Series: VEE can vary −0.46 V / +0.8 V.

11. Within-device skew is defined as identical transitions on similar paths through a device.

12. Within-gate skew is defined as the variation in propagation delays of a gate when driven from its different inputs.

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