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GP200MHS12

Half Bridge IGBT Module

Dynex Semiconductor 

GP200MHS12

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

ICES

Collector cut-off current

IGES

VGE(TH)

V

CE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

IF

Diode forward current

IFM

Diode maximum forward current

V

Diode forward voltage

F

Cies

Input capacitance

LM

Module inductance

Test Conditions

V = 0V, V = V

GE

CE

CES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

IC = 10mA, VGE = VCE

VGE = 15V, IC = 200A

VGE = 15V, IC = 200A, , Tcase = 125˚C

DC

tp = 1ms

IF = 200A

IF = 200A, Tcase = 125˚C

VCE = 25V, VGE = 0V, f = 1MHz

-

Min. Typ. Max. Units

-

-

1

mA

-

-

12 mA

-

-

±1 µA

4.5

-

6.5

V

-

2.7

3.5

V

-

3.2

4.0

V

-

-

200 A

-

-

400 A

-

2.2

2.4

V

-

2.3

2.5

V

-

25

-

nF

-

30

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/10

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