BSM 25 GD 120 D2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω
10 3
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 25 A
10 3
tdoff
t
ns
tdoff
t
ns
tdon
10 2
tdon
10 2
tr
tr
tf
tf
10 1
0
10
20
30
40
A
60
IC
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 47 Ω
10
Eon
mWs
E
8
7
6
5
4
Eoff
3
2
1
0
0
10
20
30
40
A
60
IC
10 1
0
20 40 60 80 100 120 140 Ω 180
RG
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 25 A
10
mWs
E
8
7
Eon
6
5
4
3
Eoff
2
1
0
0 20 40 60 80 100 120 140 Ω 180
RG
Semiconductor Group
7
Feb-10-1997