JANTX2N6764(2019) Ver la hoja de datos (PDF) - International Rectifier
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JANTX2N6764
(Rev.:2019)
(Rev.:2019)
International Rectifier
JANTX2N6764 Datasheet PDF : 7 Pages
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REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE -TO-3 (TO-204AE)
Product Summary
Part Number
BVDSS
IRF150
100V
RDS(on)
ID
0.055
38A
PD- 90337H
IRF150
JANTX2N6764
JANTXV2N6764
100V, N-CHANNEL
REF: MIL-PRF-19500/543
Description
HEXFET® MOSFET technology is the key to IR Hirel advanced
line of power MOSFET transistors. The efficient geometry and
unique processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with high trans
conductance; superior reverse energy and diode recovery dv/dt
capability.
The HEXFET transistors also feature all of the well established
advantages of MOSFETs such as voltage control, very fast
switching and temperature stability of the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high energy pulse circuits.
TO-3 (TO-204AE)
Features
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
TJ
Operating Junction and
TSTG
Storage Temperature Range
Lead Temperature
Weight
Value
38
24
152
150
1.2
± 20
150
38
15
5.5
-55 to + 150
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-07-03
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