HB52R1289E22-B6B Ver la hoja de datos (PDF) - Elpida Memory, Inc

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HB52R1289E22-B6B

1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM

Elpida Memory, Inc 

HB52R1289E22-A6B/B6B

Absolute Maximum Ratings

Parameter

Voltage on any pin relative to VSS

Symbol

VT

Supply voltage relative to VSS

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

Note: 1. Respect to VSS

VCC

Iout

PT

Topr

Tstg

Value

Unit

Note

–0.5 to VCC + 0.5

V

1

(≤ 4.6 (max))

–0.5 to +4.6

V

1

50

mA

18.0

W

0 to +55

°C

–50 to +100

°C

DC Operating Conditions (Ta = 0 to +55°C)

Parameter

Symbol

Min

Max

Unit

Supply voltage

Input high voltage

Input low voltage

Ambient illuminance

VCC

3.0

3.6

V

VSS

0

0

V

VIH

2.0

VCC

V

VIL

0

0.8

V

—

—

100

lx

Notes: 1. All voltage referred to VSS

2. The supply voltage with all VCC and VCCQ pins must be on the same level.

3. The supply voltage with all VSS and VSSQ pins must be on the same level.

4. VIH (max) = VCC + 2.0 V for pulse width ≤ 3 ns at VCC.

5. VIL (min) = VSS – 2.0 V for pulse width ≤ 3 ns at VSS.

Notes

1, 2

3

1, 4

1, 5

Data Sheet E0017H20

10

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