HB52RF1289E2-75B Ver la hoja de datos (PDF) - Elpida Memory, Inc

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HB52RF1289E2-75B

1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 133 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC133 SDRAM

Elpida Memory, Inc 

HB52RF1289E2-75B

Capacitance (Ta = 25°C, VCC = 3.3 V ± 0.3 V)

Parameter

Symbol

Max

Unit

Notes

Input capacitance (Address)

CI1

25

pF

1, 2, 4

Input capacitance (RE, CE, W)

CI2

25

pF

1, 2, 4

Input capacitance (CKE)

CI3

45

pF

1, 2, 4

Input capacitance (S)

CI4

20

pF

1, 2, 4

Input capacitance (CK)

CI5

45

pF

1, 2, 4

Input capacitance (DQMB)

CI6

20

pF

1, 2, 4

Input/Output capacitance (DQ)

CI/O1

25

pF

1, 2, 3, 4

Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.

2. Measurement condition: f = 1 MHz, 1.4 V bias, 200 mV swing.

3. DQMB = VIH to disable Data-out.

4. This parameter is sampled and not 100% tested.

AC Characteristics (Ta = 0 to 55°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)

Parameter

System clock cycle time

CK high pulse width

CK low pulse width

Access time from CK

Data-out hold time

CK to Data-out low impedance

CK to Data-out high impedance

Data-in setup time

Data in hold time

Address setup time

Address hold time

CKE setup time

CKE setup time for power down exit

CKE hold time

HB52RF1289E2-75B

PC133

PC100

CE latency = 4 CE latency = 3

PC100

Symbol Symbol Min Max Min Max

t CK

Tclk 7.5

—

10

—

t CKH

Tch 3.4

—

4

—

t CKL

Tcl

3.4

—

4

—

t AC

Tac —

6.3

—

6.9

t OH

Toh 1.8

—

2.1

—

t LZ

1.1

—

1.1

—

t HZ

—

6.3

—

6.9

t DS

Tsi

2.4

—

2.9

—

t DH

Thi

1.7

—

1.9

—

t AS

Tsi

1.9

—

2.6

—

t AH

Thi

1.5

—

1.6

—

t CES

Tsi

1.9

—

2.6

—

t CESP

Tpde 1.9

—

2.6

—

t CEH

Thi

1.5

—

1.6

—

Unit Notes

ns 1

ns 1

ns 1

ns 1, 2

ns 1, 2

ns 1, 2, 3

ns 1, 4

ns 1

ns 1

ns 1

ns 1

ns 1, 5

ns 1

ns 1

Data Sheet E0018H10

11

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