MC-4R128FKK8K Ver la hoja de datos (PDF) - Elpida Memory, Inc
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MC-4R128FKK8K Datasheet PDF : 13 Pages
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MC-4R128FKK8K
RIMM Module Current Profile
IDD
RIMM module power conditions Note1
MAX.
Unit
IDD1
One RDRAM device per channel in Read Note2,
balance in NAP mode
1418
mA
IDD2
One RDRAM device per channel in Read Note2,
balance in Standby mode
1590
mA
IDD3
One RDRAM device per channel in Read Note2,
balance in Active mode
1680
mA
IDD4
One RDRAM device per channel in Write,
balance in NAP mode
1538
mA
IDD5
One RDRAM device per channel in Write,
balance in Standby mode
1710
mA
IDD6
One RDRAM device per channel in Write,
balance in Active mode
1800
mA
Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage
patterns. Please refer to specific RIMM module vendor data sheets for additional information. Power does
not include Refresh Current. Max current computed for x16 256Mb RDRAM components. x18 288Mb
RDRAM components use 8 mA more current per RDRAM device in Read and 60mA more current per
RDRAM device in Write.
2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257mA or
290mA for x18 ECC module for the following : VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL =
VREF − 0.5V.
Preliminary Data Sheet E0252N10 (Ver. 1.0)
10
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