NTE6129 Ver la hoja de datos (PDF) - NTE Electronics

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NTE6129

Silicon Power Rectifier Diode, 700 Amp

NTE Electronics 

Electrical Specifications (Cont’d):

Parameter

Maximum I2t for Fusing

Maximum I2pt

Maximum Peak Forward Voltage

Symbol

I2t t = 10ms

t = 8.3ms

Test Conditions

Rated VRRM reapplied, initial

TJ = +150°C

t = 10ms No voltage reapplied, initial

t = 8.3ms TJ = +150°C

I2pt t = 0.1 to 10ms, no voltage reapplied

VFM TJ = +150°C, Ipk = 1500A, tp = 10ms

Rating

306

279

432

395

Unit

A2s

A2s

A2s

A2s

4320 A2pt

2.2

V

Recovery Characteristics:

TJ = +25°C

typical trr

@ 25% IRRM

2.0µs

Ipk

Square Pulse

1000A

Test Conditions

di/dt

50A/µa

Vr

–50V

Max Values @ TJ = +150°C

trr

@ 25% IRRM

Qrr

Trr

3.5µs

240µC

110A

2.290 (58.16)

Dia Max

1.045 (26.54)

.040 (1.01)

.040 (1.01)

1.338

(33.98)

Cathode

Marking

.140 (3.55) Dia x

.083 (2.1) Deep

(Both Sides)

1.338 2.060

(33.98) (52.32)

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