2SK217 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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2SK217

Silicon N-Channel Junction FET

Hitachi -> Renesas Electronics 

2SK217

Absolute Maximum Ratings (Ta = 25°C)

Item

Gate to drain current

Drain current

Gate current

Channel power dissipation

Channel temperature

Storage temperature

Symbol

VGDO

ID

IG

Pch

Tch

Tstg

Ratings

Unit

–30

V

20

mA

10

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Gate to drain breakdown

voltage

V(BR)GDO

–30

—

Gate cutoff current

I GSS

—

—

Gate to source cutoff voltage VGS(off)

—

—

Drain current

I

*1

DSS

2.5

—

Forward transfer admittance |yfs|

—

8.0

Reverse transfer capacitance Crss

—

0.1

Note: 1. The 2SK217 is grouped by IDSS as follows.

Grade

C

D

E

Mark

ZC

ZD

ZE

I DSS

2.5 to 5

4 to 8

6 to 12

Max Unit

—

V

–10 nA

–2.5 V

12

mA

—

mS

—

pF

Test conditions

IG = –100 µA

VGS = –0.5 V, VDS = 0

VDS = 5 V, ID = 10 µA

VDS = 5 V, VGS = 0

VDS = 5 V, VGS = 0, f = 1 kHz

VDS = 5 V, VGS = 0, f = 1 MHz

2

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