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IRKH43018 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
IRKH43018
IR
International Rectifier IR
IRKH43018 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRK.430.. Series
Bulletin I27400 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.430..
Voltage
Code
16
18
20
VRRM/VDRM, maximum repetitive
peak reverse voltage
V
1600
1800
2000
VRSM , maximum non-
repetitive peak rev. voltage
V
1700
1900
2100
IRRM/IDRM max.
@ TJ = TJ max.
mA
100
On-state Conduction
Parameter
I
T(AV)
IF(AV)
IT(RMS)
ITSM
IFSM
Maximum average on-state current
@ Case temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
I2t
Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
rt1
Low level value of on-state slope resistance
rt2
High level value of on-state slope resistance
VTM Maximum on-state or forward
V
voltage drop
FM
IH
Maximum holding current
IL
Typical latching current
IRK.430..
430
82
675
15.7
16.4
13.2
13.8
1232
1125
871
795
12320
0.96
1.06
0.51
0.45
1.65
500
1000
Units Conditions
A 180° conduction, half sine wave
°C
A 180° conduction, half sine wave @ TC = 82°C
KA t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied Sinusoidal half wave,
KA2s t = 10ms No voltage Initial T = T max.
JJ
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
KA2s t = 0.1 to 10ms, no voltage reapplied
V
(16.7%
x
π
x
I
T(AV)
<
I
<
π
x
I ),
T(AV)
T
J
=
T
J
max.
(I
>
π
x
IT(AV)),
T
J
=
T
J
max.
m(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V Ipk = 1500A, TJ = 25°C, tp = 10ms sine pulse
mA TJ = 25°C, anode supply 12V resistive load
Switching
Parameter
di/dt Maximum rate of rise of turned-on
current
td
Typical delay time
tq
Typical turn-off time
2
IRK.430..
1000
Units Conditions
A/µs TJ = TJ max., ITM = 400A, VDRM applied
2.0
µs Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM , TJ = 25°C
200
µs ITM = 750A, TJ = TJ max, di/dt = -60A/µs,
V
R
=
50V,
dv/dt
=
20V/µs,
Gate
0
V
100
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