BUK7640-100A Ver la hoja de datos (PDF) - Philips Electronics
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BUK7640-100A Datasheet PDF : 8 Pages
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Philips Semiconductors
TrenchMOS transistor
Standard level FET
Product specification
BUK7640-100A
AVALANCHE LIMITING VALUE
SYMBOL
WDSS1
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 26 A; VDD ≤ 25 V;
VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
MIN.
-
TYP.
-
MAX. UNIT
31 mJ
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); VGS ≥ 10 V
1000
ID/A
RDS(ON)=VDS/ID
100
tp =
1us
10us
100us
10
1ms
DC
10ms
100ms
1
1
10
VDS/V
100
1000
Fig.3. Safe operating area
ID & IDM = f(VDS); IDM single pulse; parameter tp
10
Zth/(K/W)
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0
0.001
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1 For maximum permissible repetive avalanche current see fig.18.
December 1999
3
Rev 1.000
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