MAX2630EUS-T Ver la hoja de datos (PDF) - Maxim Integrated
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MAX2630EUS-T Datasheet PDF : 12 Pages
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VHF-to-Microwave, +3V,
General-Purpose Amplifiers
ABSOLUTE MAXIMUM RATINGS
VCC to GND ................................................................-0.3V to 6V
Input Power.........................................................................5dBm
OUT Current .....................................................................±12mA
IN to GND Voltage ...................................................-1.2V to 1.2V
Bias to GND Voltage ....................................................0.0V to 3V
Voltage at SHDN Input
(MAX2631/MAX2633) ............................-0.3V to (VCC + 0.3V)
Current into SHDN Input (MAX2631/MAX2633).................100µA
Continuous Power Dissipation (TA = +70°C)
SOT143 (derate 4mW/°C above +70°C) .....................320mW
SOT23-5 (derate 7.1mW/°C above +70°C).................571mW
SOT23-6 (derate 7.1mW/°C above +70°C).................571mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
CAUTION! ESD SENSITIVE DEVICE
ELECTRICAL CHARACTERISTICS
(VCC = +3V, Z0 = 50Ω, fIN = 900MHz, RBIAS = 10kΩ (MAX2632/MAX2633), V SHDN = VCC (MAX2631/MAX2633), TA = +25°C, unless
otherwise noted.)
PARAMETERS
CONDITIONS
MIN
Operating Temperature Range
(Note 1)
-40
Supply Voltage
2.7
Power Gain
TA = +25°C
11
TA = TMIN to TMAX (Note 1)
9.4
Noise Figure
Output 1dB Compression Point
Output IP3
Input Voltage Standing-Wave Ratio fIN = 800MHz to 1000MHz
Output Voltage Standing-Wave Ratio fIN = 800MHz to 1000MHz
RBIAS = 40kΩ
VCC = 3V, TA = +25°C
5.5
Supply Current
RBIAS =10kΩ VCC = 3V, TA = TMIN to TMAX (Note1) 4.2
VCC = 2.7V to 5.5V, TA = +25°C
5.2
RBIAS = 500Ω
15
Shutdown Supply Current
MAX2631/MAX2633
SHDN Input Low Voltage
MAX2631/MAX2633, VCC = 2.7V to 5.5V
SHDN Input High Voltage
MAX2631/MAX2633, VCC = 2.7V to 5.5V
2.0
SHDN Input Bias Current
MAX2631/
MAX2633
VSHDN = VCC
VSHDN = GND
TYP
13.4
3.8
-11
-1
1.3:1
1.25:1
1.3
6.5
6.5
6.5
17
<0.1
MAX
85
5.5
16.5
18.4
UNITS
degrees
V
dB
dB
dBm
dBm
1.5
8.0
9.2
mA
11.0
1
µA
0.45
V
V
30
µA
1
Note 1: Guaranteed by design and characterization.
2 _______________________________________________________________________________________
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