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P4C188

ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS

Performance Semiconductor 

P4C188/188L

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

Parameter

I

CC

Dynamic Operating Current*

Temperature

Range

Commercial

Industrial

Military

–10 –12 –15 –20 –25 –35 –45 Unit

180 170 160 155 150 N/A N/A mA

N/A 180 170 160 155 150 N/A mA

N/A N/A 170 160 155 150 145 mA

*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL

DATA RETENTION CHARACTERISTICS (P4C188L Military Temperature Only)

Symbol

Parameter

Test Conditions

VDR

ICCDR

tCDR

tR†

VCC for Data Retention

Data Retention Current

Chip Deselect to

Data Retention Time

Operation Recovery Time

CE ≥ VCC –0.2V,

VIN ≥ VCC –0.2V or

VIN ≤ 0.2V

*T

A

=

+125°C

§tRC = Read Cycle Time

† This parameter is guaranteed but not tested.

Typ.*

Max

Min

VCC =

VCC =

Unit

2.0V 3.0V 2.0V 3.0V

2.0

V

10

15 600 900 µA

0

ns

t§

ns

RC

DATA RETENTION WAVEFORM

DATA RETENTION MODE

VCC

4.5V

VDR ≥ 2V

4.5V

t CDR

tR

CE

VDR

VIH

VIH

65

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