P4C188L Ver la hoja de datos (PDF) - Performance Semiconductor
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P4C188L Datasheet PDF : 8 Pages
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P4C188/188L
AC CHARACTERISTICS - WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym. Parameter
-10
-12
-15
-20
-25
-35
-45
Unit
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
t
WC
Write Cycle Time 10
12
13
20
25
35
45
ns
tCW Chip Enable
7
8
10
13
15
25
35
ns
Time to
End of Write
t
AW
Address Valid
7
8
10
15
20
25
35
ns
to End of Write
tAS Address
0
0
0
0
0
0
0
ns
Set-up Time
t
Write Pulse
8
9
10
13
15
25
35
ns
WP
Width
t
AH
Address Hold
0
0
0
0
0
0
0
ns
Time from
End of Write
t
Data Valid to
5
6
DW
End of Write
tDH Data Hold
0
0
Time
7
8
10
15
20
ns
0
0
0
0
5
ns
tWZ Write Enable
to Ourput in
High Z
5
6
6
8
10
15
20 ns
tDW Output Active
2
2
from End
of Write
2
2
2
3
3
ns
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED) (9)
(11)
t WC
ADDRESS
CE
t CW
t AW
t WP
t WR
t AH
WE
DATA IN
DATA OUT
t AS
DATA UNDEFINED
t
(12)
WZ
t DW
DATA VALID
t DH
t
(10,
OW
12)
HIGH IMPEDANCE
Notes:
9. CE and WE must be LOW for WRITE cycle.
10. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state.
11. Write Cycle Time is measured from the last valid address to the first
transition address.
12. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
67
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