P4C116-25LM Ver la hoja de datos (PDF) - Performance Semiconductor
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P4C116-25LM Datasheet PDF : 8 Pages
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P4C116
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
ICC Dynamic Operating Current*
Temperature
Range
Commercial
Military
–10 –12 –15 –20 –25 –35 Unit
180 170 160 155 150 140 mA
N/A N/A 170 160 155 150 mA
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym.
Parameter
tRC Read Cycle Time
tAA Address Access Time
tAC Chip Enable Access Time
tOH Output Hold from Address Change
t
LZ
Chip Enable to Output in Low Z
tHZ Chip Disable to Output in High Z
tOE Output Enable Low to Data Valid
tOLZ Output Enable Low to Low Z
tOHZ Output Enable High to High Z
t
PU
Chip Enable to Power Up Time
t
PD
Chip Disable to Power Down
–10
–12
–15
–20
–25
–35
Min Max Min Max Min Max Min Max Min Max Min Max
10
12
15
20
25
35
10
12
15
20
25
35
10
12
15
20
25
35
2
2
2
2
2
2
2
2
2
2
3
3
5
6
7
8
10
15
6
8
10
10
15
20
0
0
0
0
0
0
6
7
8
9
12
15
0
0
0
0
0
0
10
12
15
20
20
25
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING WAVEFORM OF READ CYCLE NO. 1 (OE CONTROLLED)(5)
(9)
t RC
ADDRESS
OE
CE
DATA OUT
t AA
t OE
tOLZ (8)
t AC
tLZ (8)
t OH
t
(8)
OHZ
t
(8)
HZ
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
5. WE is HIGH for READ cycle.
6. CE is LOW and OE is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with CE transition
LOW.
8. Transition is measured ± 200 mV from steady state voltage prior to
change, with loading as specified in Figure 1. This parameter is
sampled and not 100% tested.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
49
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