IRG7IC28 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRG7IC28 Datasheet PDF : 7 Pages
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IRG7IC28UPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
16
IC = 40A
14
12
VCES = 120V
10
VCES = 300V
VCES = 400V
8
6
100
Coes
Cres
10
0
100 200 300 400 500
VCE, Collector-toEmitter-Voltage(V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
4
2
0
0 10 20 30 40 50 60 70 80
Q G, Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
6000
5000
4000
EOFF
3000
2000
1000
EON
0
0 10 20 30 40 50 60 70 80 90
IC (A)
Fig. 15 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 250µH; VCE = 400V, RG = 22Ω; VGE = 15V
10
D = 0.50
1
0.20
0.10
0.1
0.01
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R4R4
τCτ
Ri (°C/W)
0.19973
0.38341
τi (sec)
0.000268
0.002261
τ4 τ4
1.17794 0.154543
1.36892 2.511
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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