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RJP30

Silicon N Channel IGBT High Speed Power Switching

Renesas Electronics 

RJP30K3DPP-M0

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

2.5

Collector to emitter saturation voltage VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Notes: 3. Pulse test.

Preliminary

Typ

—

—

—

1.1

1700

84

36

49

9

13

0.03

0.09

0.08

0.25

Max

1

±100

5

1.6

—

—

—

—

—

—

—

—

—

—

Unit

A

nA

V

V

pF

pF

pF

nC

nC

nC

s

s

s

s

(Ta = 25°C)

Test Conditions

VCE = 360 V, VGE = 0

VGE = ±30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 40 A, VGE = 15 V Note3

VCE = 25 V

VGE = 0

f = 1 MHz

VGE = 15 V

VCE = 150 V

IC = 40 A

IC = 40 A

RL = 4 

VGE = 15 V

RG = 5 

R07DS0501EJ0100 Rev.1.00

Jul 05, 2011

Page 2 of 6

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